View 2MBI100N-060_138805.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IGBT MODULE ( N series ) n Features
* Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Improved FWD Characteristic * Minimized Internal Stray Inductance * Overcurrent Limiting Function (~3 Times Rated Current)
n Outline Drawing
n Applications
* High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply
n Maximum Ratings and Characteristics
* Absolute Maximum Ratings
Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *1 Ratings 600 20 100 200 100 200 400 +150 -40 +125 2500 3.5 3.5 Units V V A W C C V Nm
n Equivalent Circuit
Note: *1:Recommendable Value; 2.5 3.5 Nm (M5)
* Electrical Characteristics
Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time
( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE= 20V VGE=20V IC=100mA VGE=15V IC=100A VGE=0V VCE=10V f=1MHz VCC=300V IC=100A VGE= 15V RG=24 IF=100A VGE=0V IF=100A Min. Typ. Max. 1.0 15 7.5 2.8 Units mA A V V pF 1.2 0.6 1.0 0.35 3.0 300
4.5 6600 1470 670 0.6 0.2 0.6 0.2
s V ns
* Thermal Characteristics
Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.31 0.70 Units C/W
0.05
Collector current vs. Collector-Emitter voltage T j=25C 250 V GE =20V,15V,12V 200 200
C
Collector current vs. Collector-Emitter voltage T j=125C 250 V GE =20V,15V, 12V
[A]
Collector current : I
C
10V
Collector current : I
150
[A]
150
10V
100
100
50 8V 0 0 1 2 3 4 5 6 Collector-Emitter voltage : V CE [V]
50 8V 0 0 1 2 3 4 5 6 Collector-Emitter voltage : V CE [V]
Collector-Emitter vs. Gate-Emitter voltage T j=25C 10 10
CE
Collector-Emitter vs. Gate-Emitter voltage T j=125C
[V]
CE
8
[V]
8
Collector-Emitter voltage : V
6
Collector-Emitter voltage : V
6
4
IC= 200A
4
IC= 200A 100A
2
100A 50A
2
50A
0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V]
0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V]
Switching time vs. Collector current V CC =300V, R G =24 , V GE =15V, T j=25C 1000 1000
Switching time vs. Collector current V CC =300V, R G =24 , V GE =15V, Tj=125C
, t r , t off , t f [nsec]
, t r , t off , t f [nsec]
t on t off tr tf 100
t off t on tr tf
on
on
100
Switching time : t
10 0 50 100 150 Collector current : I C [A]
Switching time : t
10 0 50 100 150 Collector current : I C [A]
Switching time vs. R G V CC =300V, I C =100A, V GE =15V, T j=25C 500 t on t off
Dynamic input characteristics T j=25C 25 V CC =200V
, t r , t off , t f [nsec]
1000
[V]
CE
400
300V 400V
20
tr tf 100
Collector-Emitter voltage : V
300
15
Switching time : t
on
200
10
100
5
10 10 Gate resistance : R G [W] 100
0 0 100 200 300 400 500 Gate charge : Q G [nC]
0 600
Forward current vs. Forward voltage V GE = O V 250
Reverse recovery characteristics t rr , I rr vs. I F t rr 125C
rr
[A]
200
rr [nsec]
T j=125C 25C
F
[A]
100 I rr 125C t rr 25C I rr 25C
Reverse recovery current : I
Forward current : I
150
100
50
Reverse recovery time
10
0 0 1 2 Forward voltage : V F [V] 3 4
:t
0
50
100
150
Forward current : I F [A]
Reversed biased safe operating area Transient thermal resistance 1 Diode 1000 +V GE =15V, -V GE <15V, T j<125C, R G >24
[C/W]
IGBT
C
800
th(j-c)
[A]
Collector current : I
600
SCSOA (non-repetitive pulse)
Thermal resistance : R
0,1
400
200 RBSOA (Repetitive pulse) 0,01 0,001 0 0,01 0,1 1 0 100 200 300 400 500 600 Pulse width : PW [sec] Collector-Emitter voltage : V CE [V]
Switching loss vs. Collector current V CC=300V, R G =24 , V GE =15V 10
Capacitance vs. Collector-Emitter voltage T j=25C
, E off , E rr [mJ/cycle]
, C oes , C res [nF]
E off 125C 8
10 C ies
6
E off 25C
on
Switching loss : E
4
Capacitance : C
E on 125C E on 25C
ies
1
C oes C res
2 E rr 125C 0 0 50 100 Collector Current : I C [A] E rr 25C 150 200
0,1 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [V]
Fuji Electric GmbH
Lyoner Strae 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56
Fuji Electric (UK) Ltd.
Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 Specification is subject to change without notice
May 97

▲Up To Search▲

Price & Availability of 2MBI100N-060

	To Download 2MBI100N-060 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .